http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2611B -2.4a , -60v , r ds(on) 175 m ? p-channel enhancement mode mosfet 16-mar-2015 rev. a page 1 of 4 top view rohs compliant product a suffix of -c specifies halogen and lead-free description SST2611B utilized advanced processing techniques to achieve the lowest possible on-resistance, extremel y efficient and cost-effectiveness device. the sot-26 package is universally used for all commercial-indu strial applications. features simple drive requirement smaller outline package surface mount package marking package information package mpq leader size sot-26 3k 7 inch absolute maximum ratings ( t j =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v t a =25c -2.4 continuous drain current @ v gs =10v 1 t a =70c i d -1.7 a pulsed drain current 2 i dm -4.5 a power dissipation 3 t a =25c p d 1.1 w linear derating factor 0.009 w / c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to ambient 1 r ja 110 c / w 2611b date code a h e f l g j k c d b millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.37 ref. b 2.60 3.00 h 0.30 0.55 c 1.20 ref. j - - d 1.40 1.80 k 0.12 ref. e 0.95 ref. l - 0.10 f 0.60 ref. sot-26
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2611B -2.4a , -60v , r ds(on) 175 m ? p-channel enhancement mode mosfet 16-mar-2015 rev. a page 2 of 4 electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss -60 - - v v gs =0, i d = -250ua gate-threshold voltage v gs(th) -1 - -3 v v ds =v gs , i d = -250ua gate-body leakage current i gss - - 100 na v gs = 20v t j =25 c - - -1 drain-source leakage current t j =55 c i dss - - -5 a v ds = -48v, v gs =0 - - 175 v gs = -10v, i d = -2a drain-source on-resistance 2 r ds(on) - - 220 m v gs = -4.5v, i d = -1a forward transconductance g fs - 5.8 - s v ds = -10v, i d = -2a dynamic total gate charge 2 q g - 4.59 - gate-source charge q gs - 1.39 - gate-drain charge q gd - 1.62 - nc v ds = -20v, v gs = -4.5v, i d = -2a turn-on delay time 2 t d(on) - 17.4 - rise time t r - 5.4 - turn-off delay time t d(off) - 37.2 - fall time t f - 2.4 - ns v ds = -15v, v gs = -10v, r g =3.3 , i d = -1a input capacitance c iss - 531 - output capacitance c oss - 59 - reverse transfer capacitance c rss - 38 - pf v gs =0, v ds = -15v, f=1.0mhz source - drain diode diode forward voltage 2 v sd - - -1.2 v i s = -1a, v gs =0 continuous source current 1,4 i s - - -2.4 a pulsed source current 2,4 i sm - - -4.5 a v g = v d =0 force current notes: 1. surface mounted on a 1 inch2 fr-4 board with 2oz copper, 156 /w when mounted on min. copper pad. 2. the data tested by pulsed, pulse width Q 300us, duty cycle Q 2%. 3. the power dissipation is limited by 150 junction temperature. 4. the data is theoretically the same as id and idm , in real applications, should be limited by total power dissipation.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2611B -2.4a , -60v , r ds(on) 175 m ? p-channel enhancement mode mosfet 16-mar-2015 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SST2611B -2.4a , -60v , r ds(on) 175 m ? p-channel enhancement mode mosfet 16-mar-2015 rev. a page 4 of 4 characteristic curves
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